• Department of Energy, 2003-2010, Quantum Dots on a Silicon-On-Insulator (QD/SOI): Nanoscale Strain and Band Structure Engineering

• 7,276,283 - Plasma-enhanced functionalization of carbon-containing substrates, granted Oct 2007.
• 7,229,901 - Fabrication of strained heterojunction structures, granted Jun 2007.
• 7,109,121 - Stress control of semiconductor microstructures for thin film growth, granted Sep 2006.
• 7,095,018 - Deposition of samples and sample matrix for enhancing the sensitivity of matrix assisted laser desorption/ionization mass spectrometry, granted Aug 2006.
• 6,874,699 - Methods and apparata for precisely dispensing microvolumes of fluids, granted Apr 2005.

• "Electronic Phase Diagram of Single-Element Silicon "Strain'' Superlattices"

Liu Z, Wu J, Duan WH, et al., Physical Review Letters 105 (1): 168-172 Jul 2010.  The evidence that the band gap of Si changes significantly with strain suggests that by alternating regions of strained and unstrained Si one creates a single-element electronic heterojunction superlattice (SL), with the carrier confinement defined by strain rather than by the chemical differences in conventional compositional SLs.

• "Fast tunnel rates in Si/SiGe one-electron single and double quantum dots"

Thalakulam M, Simmons CB, Rosemeyer BM, et al., Applied Physics Letters 96 (18): 183-194 May 2010.  Using charge sensing, we identify signatures of tunnel rates in and out of the dot that are fast or slow compared to the measurement rate. Such signatures provide a means to calibrate the absolute electron number and verify single electron occupation.

• "Quantum Confinement, Surface Roughness, and the Conduction Band Structure of Ultrathin Silicon Membranes"

Chen F, Ramayya EB, Euaruksakul C, Himpsel FJ, et al., ACS Nano 4(4): 2466-2474 Apr 2010.  The measured dependence of the sub-band splitting and the shift of their weighted average on degree of confinement is in excellent agreement with theory, for both Si(001) and Si(110). 

• "Effect of surface bonding on semiconductor nanoribbon wiggling structure"

Zhang Y, Yu MR, et al., Applied Physics Letters 96 (11): Mar 2010.  Established a scaling rule between the wiggling period and surface bonding area, in relation to the ratio of strain energy over the interfacial bonding energy.

• Tohoku University, Miyagi, Japan
• Soitec, USA, Peabody, MA

• RHEED, Reflection High-Energy Electron Diffraction and RHEELS, Reflection High-Energy Electron Loss Spectroscopy
• LEEM, Low Energy Electron Microscope
• RDS, Reflectance Difference Spectroscopy