• 7,135,697 - Spin readout and initialization in semiconductor quantum dot, granted Nov 2006.
• 6,597,010 - Solid-state quantum dot devices and quantum computing using nanostructured logic gates, granted July 2003.

• "Electron tunnel rates in a donor-silicon single electron transistor hybrid"

Huebl H, Nugroho CD, Morello A, Escott CC, et al., Physical Review B 81(23): 235318 June 2010.  The authors present a method to measure fast electron tunnel rates between donors and the SiSET island, using a pulsed voltage scheme and low-bandwidth current detection. 

• "Charge sensing in enhancement mode double-top-gated metal-oxide-semiconductor quantum dots"

Nordberg EP, Stalford HL, Young R, et al., Applied Physics Letters 95 (20): article #202102 Nov 2009. Laterally coupled charge sensing of quantum dots is highly desirable because it enables measurement even when conduction through the quantum dot itself is suppressed. In this work, we demonstrate such charge sensing in a double-top-gated metal-oxide-semiconductor system.

• "Sidewall damage in plasma etching of Si/SiGe heterostructures"

Ding R, Klein LJ, Friesen MG, Journal of Vacuum Science & Technology 27 (4): 836-843 Jul 2009. Here the authors report the results of experiments designed to better understand the mechanisms of plasma-induced sidewall damage in modulation-doped Si/SiGe heterostructures containing a two-dimensional electron gas.

• "Electronically driven structure changes of si captured by femtosecond electron diffraction"

Harb, M; Ernstorfer, R; Hebeisen, CT, et al., Physical Review Letters 100 (15): Art. No. 155504, Apr 2008. At excitation levels greater than similar to 6% of the valence electron density, the crystalline structure of the lattice is lost in < 500 fs, a time scale indicative of an electronically driven phase transition. We find that the relaxation process along the modified potential is not inertial but rather involves multiple scattering towards the disordered state.

• "Top-gated few-electron double quantum dot in Si/SiGe"

Shaji, N; Simmons, CB; Klein, LJ, et al., Physica E-Low-Dimensional Systems & Nanostructures 40 (3): 520-523 Jan 2008. The resulting double quantum dot was tuned to the few-electron regime and the charge stability diagram was studied as a function of the gate voltages. Understanding of such a double dot system is essential for the practical implementation of exchange-mediated multi-qubit systems in silicon devices.

• Sandia National Laboratories
• Simon Fraser University: Physics
• University of Cambridge: Cavendish Lab