Vukkadala P, Turner KT, Sinha JK, Journal of the Electrochemical Society 158(10): H1002-H1009 2011. Material removal uniformity during chemical mechanical polishing (CMP) for IC fabrication processes such as shallow trench isolation has previously been shown to be affected by nanotopography (NT) of the wafer frontside (pattern surface).
Cavallo F, Grierson DS, Turner KT, et al., ACS Nano 5(7): 5400-5407 Jul 2011. We investigate the effective mechanical response of a layered system consisting of a thin crystalline sheet (nanomembrane) on a bulk substrate, with a high elastic mismatch (in the range of 5 to 9 orders of magnitude) between the stiff sheet and the compliant substrate.
Christ KV, Turner KT, Lab on a Chip 11(8): 1491-1501 2011. Here, we examine the effect of device geometry and flow parameters on the properties of the flow envelope and pressure drop of several two-port HCM devices using a combination of experiments and modeling.
Chen WX, Tang XY, Considine J et al., Journal of Adhesion Science and Technology 25 (6-7): 581-596 2011. In the current study, the adhesion of pressure-sensitive adhesives (PSAs), a common type of adhesive used in labels and tapes, to papers containing varying amounts and types of fillers is investigated.