• Department of Defense, 2007-2010, Dilute-Nitride Materials for MWIR and LWIR Grown by MOCVD

• 7,403,552 - High efficiency intersubband semiconductor lasers, granted Jul 2008.
• 7,256,417 - Type II quantum well mid-infrared optoelectronic devices, granted Aug 2007.
• 6,845,116 - Narrow lateral waveguide laser, granted Jan 2005.
• 6,791,104 - Type II quantum well optoelectronic devices, granted Sept 2004.
• 6,608,849 - Vertical-cavity surface-emitting semiconductor laser arrays, granted Aug 2003.
• 6,396,865 - Vertical-cavity surface-emitting lasers with antiresonant reflecting optical waveguides, granted May 2002.

• "Nanofabrication of III-V semiconductors employing diblock copolymer lithography"

Kuech TF, Mawst LJ, Journal of Physics D-Applied Physics 43(18): 183001 May 2010.  The extension of nanopatterned growth, beyond the pseudomorphic limit in the case of growth of strained-layer epitaxy, can lead to defect reduction and an improved morphology when compared with non-patterned growth. 

• "Defect reduction in epitaxial GaSb grown on nanopatterned GaAs substrates using full wafer block copolymer lithography"

Jha S, Liu CC, Kuan TS, et al., Applied Physics Letters 95 (6): article#062104 Aug 2009. Defect reduction in the large lattice mismatched system of GaSb on GaAs, similar to 7%, was accomplished using full wafer block copolymer (BCP) lithography.

• "Controlled growth of InGaAs/InGaAsP quantum dots on InP substrates employing diblock copolymer lithography"

Park JH, Kirch J, Mawst LJ et al. Applied Physics Letters 95(11): 113111 September 2009. Selective metalorganic chemical vapor deposition growth with diblock copolymer nano-patterning is utilized to produce InGaAsP(Q1.15 mu m)/In0.53Ga0.47As/InGaAsP(Q1.15 mu m) and InP/In0.53Ga0.47As/InP quantum dots (QDs) on InP substrates.

• "High antimony content GaAs1-zNz-GaAs1-ySby type-II "W" structure for long wavelength emission"

Rathi MK, Khandekar AA, Mawst LJ et al. Journal of Applied Physics. 106(6): 063713 September 2009. GaAs1-zNz-GaAs1-ySby type-II "W" structures were studied for long wavelength (1300-1600 nm) applications. These structures were grown on a GaAs substrate using metal-organic vapor phase epitaxy.

• "InGaAs/GaAsP/AlGaAs, deep-well, quantum-cascade light-emitting structures grown by metalorganic chemical vapor deposition"

Xu DP, D'Souza M, Shin JC, et al., Journal of Crystal Growth 310 (7-9): Sp. Iss. SI 2370-2376 Apr 2008. InGaAs/GaAsP/AlGaAs strain-compensated, deep-well quantum-cascade (QC) structures have been grown by low-pressure metalorganic chemical vapor deposition (MOCVD). The structures were evaluated by high-resolution X-ray diffraction (HRXRD), transmission electron microscopy (TEM), and fabricated into narrow-ridge QC light emitters for electroluminescence characterization. The HRXRD patterns and cross-sectional TEM images show that well-controlled InGaAs/GaAsP/AlGaAs QC structures can be achieved via MOCVD growth.

• "Nanoscale selective growth and optical characteristics of quantum dots on III-V substrates prepared by diblock copolymer nanopatterning"

Park JH, Liu CC, Rathi MK, Mawst LJ, et al., Journal of Nanophotonics 3: 031604 2009. 

• Reed Center for Photonics
• Lehigh University, Center for Optical Technologies, Department of Electrical and Computer Engineering, Arif, Ronald A.
• Naval Research Laboratory, Washington DC