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Researcher's Profile

Last Name

First Name

Zhenqiang (Jack)

Middle Initial

Areas of Research Expertise

* Fast/RF flexible electronics, high-speed thin film transistors, MMIC circuits transferrable to flexible or other foreign substrates for radar and communications

* Hybrid integration of organic and inorganic flexible electronics

* SiGe HBT and RF CMOS device physics and applications in high frequency/mm-wave power amplification

* Single-crystal and polycrystalline semiconductor nanomembrane physics and applications, including displays, flexible solar cells, energy conversion, environment protection, imaging, information storage, lighting, sensing, health care and bio devices

* Si nanophotonics, high-speed multispectral imaging

* CMOS-compatible optoelectronic devices and OEIC

* 3-D integration, heterogeneous integration, MEMS/NEMS integration with CMOS

* III-V heterostructure device and application

* Nanoscale SiGe bipolar transistors and quantum effect devices

Web site

Zhenqiang Ma's University Web Page

Curriculum Vitae (CV)

Current/Active Funding

Issued Patent(s)

USPTO Published Applications

20070284688 - Pin Diodes for photodetection and high speed, high resolution image sensing, December 13, 2007.
20070187719 - Method for double-sided processing of thin film transistors, August 16, 2007.
20070007626 - High-power-gain, bipolar transistor amplifier, January 11, 2007.
20060267148 - Solid-state high power device and method, November 30, 2006.
20030017700 - Process for hillock control in thin film metallization, January 23, 2003.

Recent Publication(s)

"Surface-normal Fano filters based on transferred silicon nanomembranes on glass substrates"

Yang H, Pang H, Ma Z et al. Electronics Letters. Special Issue SI: 42-43 June 2009. Surface-normal optical filters are reported based on Fano resonances in patterned single crystalline silicon nanomembranes (SiNM), which were fabricated and transferred onto transparent glass substrates using a disruptive wet transfer process.

"On the scaling of emitter stripes of SiGe power HBTs"

Wang G, Yuan HC, Ma Z, Semiconductor Science and Technology 22 (1): S84-S88 Jan 2007. The lateral scaling issues of the emitter stripe width of large-area power SiGe heterojunction bipolar transistors (HBTs) are analytically studied and experimentally verified.

"Current gain of SiGe HBTs under high base doping concentrations"

Jiang N, Ma Z, Semiconductor Science and Technology 22 (1): S168-S172 Jan 2007. In this paper, a new analytical expression for the current gain of SiGe HBTs is derived to include the NBR component in the base current. The new current gain expression indicates that the maximum achievable current gain of SiGe HBTs is limited by the NBR and can be realized via optimization of the Ge profile.

"SiGe HBT linearity comparison between CE and CB configurations"

Qin G, Jiang N, Wang G, et al., Semiconductor Science and Technology 22 (1): S216-S220 Jan 2007. Linearity characteristics between common-emitter (CE) and common-base (CB) SiGe HBTs are compared at different frequencies using a new analytical expression of third-order intermodulation distortion (IMD3) versus input power (Pin) for the first time.